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this is information on a product in full production. february 2015 docid026950 rev 3 1/16 STL86N3LLH6AG automotive-grade n-channel 30 v, 0.004 ? typ., 80 a stripfet? h6 power mosfet in a powerflat? 5x6 package datasheet - production data figure 1. internal schematic diagram features ? designed for automotive application and aec-q101 qualified ? very low on-resistance ? very low gate charge ? high avalanche ruggedness ? low gate drive power loss ? wettable flank package applications ? switching applications description this device is an n-channel power mosfet developed using the stripfet? h6 technology, with a new trench gate structure. the resulting power mosfet exhibits very low r ds(on) in all packages. powerflat? 5x6 1 2 3 4 am15540v2 5 6 7 8 12 34 top view d(5, 6, 7, 8) g(4) s(1, 2, 3) order code v ds r ds(on) max i d STL86N3LLH6AG 30 v 0.0052 80 a table 1. device summary order code marking package packaging STL86N3LLH6AG 86n3llh6 powerflat? 5x6 tape and reel www.st.com
contents STL86N3LLH6AG 2/16 docid026950 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid026950 rev 3 3/16 STL86N3LLH6AG electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 30 v v gs gate-source voltage 20 v i d (1) 1. the value is rated according to r thj-c . drain current (continuous) at t c = 25 c 80 a i d (1) drain current (continuous) at t c = 70 c 60 a i d (1) drain current (continuous) at t c = 100 c 51 a i d (2) 2. the value is rated according to r thj-pcb. drain current (continuous) at t pcb = 25 c 21 a i d (2) drain current (continuous) at t pcb =70 c 15.7 a i d (2) drain current (continuous) at t pcb =100 c 13.1 a i dm (2)(3) 3. pulse width limited by safe operating area. drain current (pulsed) 84 a p tot (1) total dissipation at t c = 25 c 60 w p tot (2) total dissipation at t pcb = 25 c 4 w t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case 2.08 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec. thermal resistance junction-pcb 31.3 c/w
electrical characteristics STL86N3LLH6AG 4/16 docid026950 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = 30 v, v ds = 30 v at t c =125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 1.7 2.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 10.5 a 0.004 0.0052 v gs = 4.5 v, i d = 10.5 a 0.0067 0.0076 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f=1 mhz, v gs =0 1350 1690 2030 pf c oss output capacitance 230 290 350 pf c rss reverse transfer capacitance 140 176 210 pf q g total gate charge v dd =15 v, i d = 21 a v gs =4.5 v (see figure 14) 17 nc q gs gate-source charge 8 nc q gd gate-drain charge 6 nc r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20 mv open drain 1.25 1.7 2 table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =15 v, i d = 10.5 a, r g =4.7 , v gs =10 v (see figure 13) -9.5-ns t r rise time - 30 - ns t d(off) turn-off delay time - 37 - ns t f fall time - 12 - ns
docid026950 rev 3 5/16 STL86N3LLH6AG electrical characteristics 16 table 7. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current - 21 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 84 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5% forward on voltage i sd = 21 a, v gs =0 - 1.1 v t rr reverse recovery time i sd = 10.5 a, di/dt = 100 a/s, v dd =25 v -24 ns q rr reverse recovery charge - 16.8 - nc i rrm reverse recovery current - 1.4 - a
electrical characteristics STL86N3LLH6AG 6/16 docid026950 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized v (br)dss vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 1s 100ms 10ms tj=150c tpcb=25c single pulse 0.01 am08914v1 10 -3 10 -2 10 -1 10 0 10 1 t p (s) 10 -3 10 -2 k 0.2 0.05 0.02 0.01 0.1 zth-pcb=k*rthj-pcb, single pulse =0.5 10 2 10 -1 pcb for powerflat i d 150 100 50 0 0 2 v ds (v) 4 (a) 1 3 5 200 250 5v 6v 4v v gs =10v 3v am08915v1 i d 150 100 50 0 0 2 v gs (v) 4 (a) 1 3 5 200 v ds =3v am08916v1 v (br)dss -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.98 1.00 1.02 1.04 0.96 1.06 i d =1ma am08917v1 r ds(on) 3.5 3.0 2.5 2.0 0 20 i d (a) (m ) 10 30 4.0 4.5 5.0 5.5 v gs =10v am08918v1
docid026950 rev 3 7/16 STL86N3LLH6AG electrical characteristics 16 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v gs 6 4 2 0 0 10 q g (nc) (v) 40 8 20 30 10 v dd =15v i d =21a 50 12 am08919v1 c 1500 1000 500 0 0 20 v ds (v) (pf) 10 2000 ciss coss crss 2500 am08920v1 v gs(th) 0.8 0.6 0.4 0.2 -50 0 t j (c) (norm) -25 1.0 75 25 50 100 1.2 i d =250a am08921v1 r ds(on) 0.6 0.4 0.2 0 -50 0 t j (c) (norm) -25 75 25 50 100 0.8 1.0 1.2 1.4 1.6 1.8 i d =10.5a v gs =10v am08922v1 v sd 0 20 i sd (a) (v) 10 50 30 40 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t j =-55c t j =150c t j =25c 70 60 am08923v1
test circuits STL86N3LLH6AG 8/16 docid026950 rev 3 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid026950 rev 3 9/16 STL86N3LLH6AG package mechanical data 16 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STL86N3LLH6AG 10/16 docid026950 rev 3 figure 19. powerflat? 5x6 wf type r drawing ( ' . / e h ( ' $ $ $ %277209,(: 6,'(9,(: 7239,(: 'hwdlo$ 'hwdlo$ 6fdoh [/ ( ( ( 3lq lghqwlilfdwlrq 3lq lghqwlilfdwlrq b5b:)b5hyb-
docid026950 rev 3 11/16 STL86N3LLH6AG package mechanical data 16 table 8. powerflat? 5x6 wf type r mechanical data dim. mm min. typ. max. a 0.80 1.00 a1 0.02 0.05 a2 0.25 b 0.30 0.50 d 5.00 5.20 5.40 e 6.20 6.40 6.60 d2 4.11 4.31 e2 3.50 3.70 e1.27 l 0.70 0.90 l1 0.275 k 1.275 1.575 e3 2.35 2.55 e4 0.40 0.60 e5 0.08 0.28
package mechanical data STL86N3LLH6AG 12/16 docid026950 rev 3 figure 20. powerflat? 5x6 wf drawing recommended footprint note: all dimensions are in mm. b5b:)b)22735,17b5hyb-
docid026950 rev 3 13/16 STL86N3LLH6AG packaging mechanical data 16 5 packaging mechanical data figure 21. powerflat? 5x6 type wf tape (a) figure 22. powerflat? 5x6 package orientation in carrier tape. a. all dimensions are in millimeters. 1.50 0.0 + 0.1 do 4.0 0.1(ii) po 1.75 0.1 e1 1.50 min d1 2.0 0.05(i) p2 y y r0.30 max 0.30 0.05 t section y-y measured from centreline of sprocket hole to centreline of pocket. cumulative tolerance of 10 sprocket holes is 0.20 . measured from centreline of sprocket hole to centreline of pocket. (i) (ii) (iii) base and bulk quantity 3000 pcs p1(8.000.1) ao(6.700.1) f(5.500.0.05)(iii) w(12.000.1) bo (5.350.05) ko (1.200.1) 8234350_tapewf_rev_c 3lq lghqwlilfdwlrq
packaging mechanical data STL86N3LLH6AG 14/16 docid026950 rev 3 figure 23. powerflat? 5x6 reel ? &25('(7$,/ 5 ?$ 5 5 3$5712 : : pd[ : 36 (6'/2*2 $77(17,21 2%6(59(35(&$87,216 )25+$1'/,1*(/(&75267$7,& 6(16,7,9('(9,&(6 $ $ooglphqvlrqvduhlqploolphwhuv ?1 ? b5hhobuhyb&
docid026950 rev 3 15/16 STL86N3LLH6AG revision history 16 6 revision history table 9. document revision history date revision changes 26-sep-2014 1 first release. 21-jan-2015 2 document status promoted from preliminary to production data. updated section 4: package mechanical data . 03-feb-2015 3 updated title and features in cover page.
STL86N3LLH6AG 16/16 docid026950 rev 3 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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